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  SSM6J07FU power management switch high speed switching applications  small package  low on resistance : r on = 450 m ? (max) (v gs = ?1 0 v) : r on = 800 m ? (max) (v gs = ? 4 v) maximum ratings (ta     25c) characteristics symbol rating unit drain-source voltage v ds  30 v gate-source voltage v gss  20 v dc i d  0.8 drain current pulse i dp  1.6 a drain power dissipation p d (note1) 300 mw channel temperature t ch 150  c storage temperature range t stg  55~150  c note 1: mounted on fr4 board (25.4 mm  25.4 mm  1.6 t, cu pad: 0.32 mm 2  6) marking equivalent circuit figure 1: 25.4 mm     25.4 mm     1.6 t, (top view) cu pad: 0.32 mm 2     6 unit: mm weight: 6.8 mg (typ.) 6 k d f 4 1 2 3 5 4 1 2 3 6 5 0.4 mm 0.8 mm product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. electrical characteristics (ta     25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs   16 v, v ds  0    1  a drain-source breakdown voltage v (br) dss i d   1 ma, v gs  0  30   v drain cut-off current i dss v ds   30 v, v gs  0    1  a gate threshold voltage v th v ds   5 v, i d   0.1 ma  1.1  1.8 v forward transfer admittance  y fs  v ds   5 v, i d   0.4 a (note2) 0.7   s i d   0.4 a, v gs   10 v (note2)  350 450 i d   0.4 a, v gs   4 v (note2)  570 800 m drain-source on resistance r ds (on) i d   0.4 a, v gs   3.3 v (note2)  0.7 1.6 input capacitance c iss v ds   15 v, v gs  0, f  1 mhz  130  pf reverse transfer capacitance c rss v ds   15 v, v gs  0, f  1 mhz  16  pf output capacitance c oss v ds   15 v, v gs  0, f  1 mhz  52  pf turn-on time t on  28  ns switching time turn-off time t off v dd   15 v, i d   0.4 a, v gs  0~  4 v, r g  10   38  ns note 2: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when low operating current value is i d   1 00  a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than vth. (relationship can be established as follows: v gs (off)  v th  v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of  4.0 v or higher to turn on this product. v dd   15 v r g  10 d.u.
  1% input: t r , t f
5 ns common source ta  25c (c) v out v dd output input 0  4 v 10  s r g t f t on 90% 10% 0 v  4 v 90% 10% t off t r v ds ( on ) v dd i d SSM6J07FU product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com


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